%0 Journal Article
%T The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods
%A C¨¦sar Moreno
%A Carmen Munuera
%A Xavier Obradors
%A Carmen Ocal
%J Beilstein Journal of Nanotechnology
%D 2012
%I 
%R 10.3762/bjnano.3.82
%X We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I¨CV characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I¨CV bipolar cycles.
%K conductive scanning probe micoscopy
%K memristor
%K 3-D modes
%K resistive switching
%K scanning probe microscopy
%U http://dx.doi.org/10.3762/bjnano.3.82