%0 Journal Article
%T Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
%A Thomas H. Loeber
%A Dirk Hoffmann
%A Henning Fouckhardt
%J Beilstein Journal of Nanotechnology
%D 2011
%I 
%R 10.3762/bjnano.2.39
%X GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski¨CKrastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 ¡ãC, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 ¡Á 1010 cm 2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between ¦Ë = 0.876 and 1.035 ¦Ìm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of ¦Ë ¡Ö 0.900 ¦Ìm at a temperature of 84 K.
%K V/III flux ratio
%K GaSb quantum dots
%K growth temperature
%K semiconductor laser
%K Stranski¨CKrastanov growth
%U http://dx.doi.org/10.3762/bjnano.2.39