%0 Journal Article
%T High-Speed Pin-Traveling Wave Photodetector Based on a Semiconductor Optical Amplifier Layer Stack on Semi-Insulating Inp Substrate
%A Mahmoud Nikoufard
%A F. S. Alaei Tabatabaei
%A S. N. Ghafouri
%J PIER    C
%D 2012
%I EMW Publishing
%R 10.2528/PIERC12020503
%X We present a pin-Traveling wave Photodetector (TWPD) on semi-insulating (SI) InP substrate at 1.55 ¦Ìm wavelength window with an electrical bandwidth of more than 120 GHz, a line characteristic impedance of about 50 W, and microwave index matched to the optical group index. The internal quantum efficiency more than 99% for a 200¦Ìm long device is determined. The layer stack of the TWPD has previously utilized in a semiconductor optical amplifier (SOA). The TWPD can be monolithically integrated with passive and active components such as arrayed waveguide grating (AWG), Mach-Zehnder Interferometer (MZI), laser and modulator.
%U http://www.jpier.org/pierc/pier.php?paper=12020503