%0 Journal Article
%T Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor
%A Xiaofeng Zhao
%A Dianzhong Wen
%A Gang Li
%J Sensors
%D 2012
%I MDPI AG
%R 10.3390/s120506369
%X A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 ¦Ìm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 ¦Ìm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor.
%K nc-Si/c-Si heterojunction
%K MOSFETs pressure sensor
%K MEMS technology
%K CMOS process
%U http://www.mdpi.com/1424-8220/12/5/6369