%0 Journal Article
%T Recent Progress in Study on Material Removal Mechanisms of Silicon Wafer During Chemical Mechanical Polishing<br>半导体芯片化学机械抛光过程中材料去除机理研究进展
%A ZHAO Yong-wu~
%A LIU Jia-jun~
%A <br>赵永武
%A 刘家浚
%J 摩擦学学报
%D 2004
%I 
%X A review is given on the current state of and recent progress in the study on the material removal mechanisms of Si wafers during chemical mechanical polishing (CMP). Thus a summary is made on the research progress about the material removal mechanisms of Si wafers subject to CMP and about the chemical mechanical polishing of SiO_2 as the commonly used dielectric material of the Si wafers. At the same time, the current state of and research progress in the chemical mechanical polishing of W, Al, and Cu as the electric-connecting materials of wafers are also summarized, and the chemical-mechanical synergistic effect during the CMP process of SiO_2, W, Al, and Cu is highlighted. It is supposed to introduce atomic force microscopy and electrochemical microscopy into the study of CMP so as to clarify the disputes on the material removal mechanisms during the CMP process and to establish scientific guidance to increasing the CMP efficiency.
%K silicon wafer
%K chemical mechanical polishing
%K material removal mechanism
%K chemical-mechanical synergistic effect<br>芯片
%K 化学机械抛光（CMP）
%K 材料去除机理
%K 化学-机械协同效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=5D344E2AD54D14F8&jid=2F467A5C6371C830162AAA01D7DAD07A&aid=EAC58AAC67A5B626&yid=D0E58B75BFD8E51C&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=E2B9962CCD971A0D&eid=EBD6B792C9111B87&journal_id=1004-0595&journal_name=摩擦学学报&referenced_num=13&reference_num=51