%0 Journal Article
%T Using an SU-8 Photoresist Structure and Cytochrome C Thin Film Sensing Material for a Microbolometer
%A Jian-Lun Lai
%A Chien-Jen Liao
%A Guo-Dung John Su
%J Sensors
%D 2012
%I MDPI AG
%R 10.3390/s121216390
%X There are two critical parameters for microbolometers: the temperature coefficient of resistance (TCR) of the sensing material, and the thermal conductance of the insulation structure. Cytochrome c protein, having a high TCR, is a good candidate for infrared detection. We can use SU-8 photoresist for the thermal insulation structure, given its low thermal conductance. In this study, we designed a platform structure based on a SU-8 photoresist. We fabricated an infrared sensing pixel and recorded a high TCR for this new structure. The SU-8 photoresist insulation structure was fabricated using the exposure dose method. We experimentally demonstrated high values of TCR from 22%/K to 25.7%/K, and the measured noise was 1.2 ¡Á 10¨C8 V2/Hz at 60 Hz. When the bias current was 2 ¦ÌA, the calculated voltage responsivity was 1.16 ¡Á 105 V/W. This study presents a new kind of microbolometer based on cytochrome c protein on top of an SU-8 photoresist platform that does not require expensive vacuum deposition equipment.
%K cytochrome c
%K temperature coefficient of resistance (TCR)
%K SU-8
%K microbolometer
%K exposure dose method
%U http://www.mdpi.com/1424-8220/12/12/16390