%0 Journal Article
%T A High Isolation Series-Shunt RF MEMS Switch
%A Yuan-Wei Yu
%A Jian Zhu
%A Shi-Xing Jia
%A Yi Shi
%J Sensors
%D 2009
%I MDPI AG
%R 10.3390/s90604455
%X This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 ¦Ìs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm ¡Á 1.2 mm.
%K series-shunt
%K RF MEMS switch
%K metal-contact
%K electrical model
%U http://www.mdpi.com/1424-8220/9/6/4455