%0 Journal Article
%T Temperature dependent spectral response characteri- stic of III-V compound tandem cell<br>
%A LIU Lei
%A CHEN NuoFu
%A WANG Yu
%A BAI YiMing
%A CUI Min &|GAO FuBao
%A <br>
%J 科学通报(英文版)
%D 2009
%I 
%X The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum efficiency system at temperatures ranging from 25°C to 160°C. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap narrowing with temperature. The short-circuit current densities (J sc) of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm2, respectively. The temperature coefficient of J sc for the tandem cell was determined to be 8.9 μA/(cm2 · °C), and the corresponding temperature coefficient of the open-circuit voltage deduced from the series-connected model was  6.27 mV/°C.
%K spectral response
%K tandem cell
%K temperature coefficient<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=4CBF10FF74C78F6869EAABFAAE7BB1A0&yid=DE12191FBD62783C&vid=318E4CC20AED4940&iid=38B194292C032A66&sid=A5111BA190517959&eid=FA88DCCE84EA0A56&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=12