%0 Journal Article
%T Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature
%A Deyan He
%A Xiaoqiang Wang
%A Qiang Chen
%A Junshuai Li
%A Min Yin
%A A V Karabutov
%A A G Kazanskii
%A <br>HE
%A Deyan
%A WANG
%A Xiaoqiang
%A CHEN
%A Qiang
%A LI
%A Junshuai
%A YIN
%A Min
%A A.
%A V.
%A Karabutov
%A A.
%A G.
%A Kazanskii
%J 科学通报(英文版)
%D 2006
%I 
%X Silicon thin films were deposited by inductively coupled plasma CVD at room temperature. Raman spectrum and atomic force microscopy were used to characterize the structure and topography of the samples. It was shown that, under the optimum plasma conditions, nano-crystalline Si film was grown with high-density Si tips in a random distribution on surface. The height and the mean basal diameter of the Si tips were 30–40 nm and ～200 nm, respectively. The film with such a surface topography was demonstrated to have good behavior of electron field emission. The typical threshold field is about 7–10 V/μm.
%K ICP-CVD
%K nano-scale Si tips
%K electron field emission
%K low-temperature growth<br>纳米晶硅薄膜
%K 电子场发射
%K 感应耦合等离子体
%K 化学气相沉积
%K 低温生长
%K ICP-CVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=D2CDE4FD8D75426C0DE24F53D262F2F4&yid=37904DC365DD7266&vid=987EDA49D8A7A635&iid=94C357A881DFC066&sid=25467A5A28500A25&eid=C4BBAD7A2DCC89BC&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=14