%0 Journal Article
%T Content analyses in GaMnAs by double-crystal X-ray diffraction<br>
%A CHEN Nuofu
%A XIU Huixin
%A YANG Junling
%A WU Jinling
%A ZHONG Xingru
%A LIN Lanying
%A <br>
%J 科学通报(英文版)
%D 2002
%I 
%X A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.
%K GaMnAs
%K diluted magnetic semiconductor
%K X-ray diffraction
%K lattice parameter
%K content of Mn<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=B262B1BFE268359A8F2D8A4A48C6DF03&yid=C3ACC247184A22C1&vid=F4B561950EE1D31A&iid=E158A972A605785F&sid=6826CBE9C80ACB20&eid=7979125BBE749348&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=6