%0 Journal Article
%T Modulation of low-frequency oscillations in GaAs MESFETs’ channel current by sidegating bias
%A Ding Yong
%A Lu Shengli
%A Zhao Fuchuan
%A <br>DINGYong
%A LUShengli
%A ZHAOFuchuan
%J 科学通报(英文版)
%D 2005
%I 
%X Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET’s output characteristics. This paper studies the oscillations by testing the MESFET’s output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL 2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC’s.
%K output characteristic
%K low-frequency oscillations
%K modulation
%K channel-substrate (C-S) junction
%K impact ionization of traps-EL
%K 2<br>通信技术
%K 低频振动
%K 信道底层连接
%K 撞击电离
%K 输出频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=A1C8FADD56D66321357DFC1076DC7080&yid=2DD7160C83D0ACED&vid=771152D1ADC1C0EB&iid=9CF7A0430CBB2DFD&sid=796A97DD793AE4A8&eid=073C3CF5F13F64FE&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=15