%0 Journal Article
%T Near infrared polymer light-emitting diodes
%A Zhang Yong
%A Yang Jian
%A Hou Qiong
%A Mo Yueqi
%A Peng Junbiao
%A Cao Yong
%A <br>ZHANGYong
%A YANGJian
%A HOUQiong
%A MOYueqi
%A PENGJunbiao
%A CAOYong
%J 科学通报(英文版)
%D 2005
%I 
%X High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7-bis (3-hexylthiophen)-2-yl-2,l,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode’s performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.
%K near infrared electroluminescence
%K copolymer
%K bilayer
%K device<br>近红外线
%K 聚合体
%K 发光二极管
%K 场致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=FB62B72CDB56A00155A4E85EF0C134F1&yid=2DD7160C83D0ACED&vid=771152D1ADC1C0EB&iid=F3090AE9B60B7ED1&sid=158793AD8125C377&eid=40700C9CB4E84E3B&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=2&reference_num=17