%0 Journal Article
%T SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER
%A TT Sun
%A ZGLiu
%A HCYu
%A MB Chen
%A JM Miao
%A <br>T.T.Sun
%A Z.G.Liu
%A H.C.Yu
%A M.B.Chen
%A J.M.Miao
%J 金属学报(英文版)
%D 2005
%I 
%X Dry etching of silicon is an essential process step for the fabrication of Micro electromechancal system (MEMS). The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed indu ctively coupled plasma (ICP) etcher. The influence of resist pattern profile, an d etch condition on sidewall roughness were investigated detail. The results sho w that the sidewall roughness of micro-trench depends on profiles of photo-resis t pattern, the initial interface between the resist bottom surface and silicon s urface heavily. The relationship between roughness and process optimization para meters are presented in the paper. The roughness of the sidewall has been decrea sed to a 20-50nm with this experiment.
%K deep RIE
%K silicon etching
%K micro-trench
%K photo-resist<br>RIE
%K 硅刻蚀
%K 微槽工艺
%K 光子抗性
%K 半导体加工
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=F06FC0700B86BDD028AFF4DB9AF5B7BC&yid=2DD7160C83D0ACED&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=21D8CE17EE5EE354&eid=EE23223CE4332BD7&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=7