%0 Journal Article
%T TRANSMISSION ELRCTRON MICROSCOPY INVESTIGATIONS OF LOW-PRESSURE CVD GROWTH AND STRAIN RELAXATION OF Ge ISLANDS ON Si（110）
%A E.Spiecker
%A L.Zhang
%A H.M.Lu
%A W.Jaeger
%A L.Vescan
%J 金属学报(英文版)
%D 2005
%I 
%X Shapes, dimensions, arrangements and the microstructure of self-assembled islands fabricated by low-pressure chemical vapour deposition (LPCVD) of Ge at 700℃ onto Si(110) substrates have been investigated for different nominal Ge coverage by transmission electron microscopy (TEM) of plan-view and cross-section specimens and have been compared with photoluminescence (PL) measurements of Si-capped layer samples. The transition from the 2-dimensional layer to the 3-dimensional island growth mode takes place for a Ge deposition of nominally less than 2 monolayers. Upon this transition, many coherent islands and few larger islands with extended defects are observed. The coherent islands possess a dome-like shape and lateral sizes up to 130nm. Photoluminescence spectra show island-related peaks whose energy positions are shifted towards lower energy with higher Ge coverage.
%K 硅-锗半导体
%K 电子显微镜
%K 纳米结构
%K 薄膜生长
%K 化学气相沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=A7FA89C247CAFF48D57FEE717E34C2A3&yid=2DD7160C83D0ACED&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=CB3428B1EFB1C133&eid=4BEA9A781F286FC6&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=19