%0 Journal Article
%T A MONTE CARLO SIMULATION OF SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES IN SCANNING ELECTRON MICROSCOPY
%A HMLi
%A ZJDing
%A <br>H.M.Li
%A Z.J.Ding
%J 金属学报(英文版)
%D 2005
%I 
%X A new parallel Monte Carlo simulation method of secondary electron (SE) and back scattered electron images (BSE) of scanning electron microscopy (SEM) for a com plex geometric structure has been developed. This paper describes briefly the si mulation method and the modification to the conventional sampling method for the step length. Example simulation results have been obtained for several artifici al structures.
%K Monte Carlo
%K SEM
%K secondary electrons
%K backscattered electrons<br>蒙特卡罗仿真
%K SEM
%K 二级电子
%K 反射电子
%K 图像处理
%K 几何结构
%K 金属材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=8B4EC36CC4A47E5B88F89DD08BC0C200&yid=2DD7160C83D0ACED&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=381FB4265090A8E0&eid=26AEEED215BE97D0&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=9