%0 Journal Article
%T OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS
%A YFHu
%A <br>Y.F.Hu
%A H.Shen
%A L.Wang
%A Z.C.Liang
%A Z.Y.Liu
%A L.S.Wen
%J 金属学报(英文版)
%D 2005
%I 
%X Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
%K poly-Si thin film
%K intra-granular defects
%K surface
%K cross-section<br>聚合硅薄膜
%K 横界面
%K 热化学蒸气沉积
%K 表面性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=F827E7C552CE161339DA37752583846D&yid=2DD7160C83D0ACED&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=AF507FDD66D991DA&eid=BF112261B65CB9C9&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=6