%0 Journal Article
%T ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES
%A HL Huang
%A JH Xing
%A GL Liu
%A GY Zhang
%A <br>HL. Huang
%A J.H Xing
%A G.L. Liu and G.Y Zhang
%J 金属学报(英文版)
%D 1997
%I 
%X The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.
%K density of state
%K strained layer superlattice
%K CdSe/ZnSe
%K Fermi energy
%K band gap<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=6B1F6973324A6E8DE0DCB02E8FA11C56&yid=5370399DC954B911&vid=F3090AE9B60B7ED1&iid=CA4FD0336C81A37A&sid=F3090AE9B60B7ED1&eid=7801E6FC5AE9020C&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=12