%0 Journal Article
%T SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM
%A FENG Shuifu ZHO U Jicheng
%A <br>FENG Shuifu ZHO U Jicheng Shanghai Institute of Metallurgy
%A Academia Sinica
%A Shanghai
%A China ZHOU Jicheng
%A Shanghai Institute of Metallurgy
%A Academia Sinica
%A Shanghai
%A China
%J 金属学报(英文版)
%D 1990
%I 
%X A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.
%K solubility
%K liquid phase epitaxy
%K phase diagram<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=82950C675D33F479D4E14EC9CB1AE780&yid=8D39DA2CB9F38FD0&vid=38B194292C032A66&iid=708DD6B15D2464E8&sid=7737D2F848706113&eid=0C3F9E980968AF79&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=4