%0 Journal Article
%T THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS
%A SB Zhang
%A <br>S.B. Zhang
%A G.L. Kong
%A Y. Y. Xu
%A Y.Q. Wang
%A H.W. Diao and X.B. Liao
%J 金属学报(英文版)
%D 2001
%I 
%X The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.
%K light-induced change
%K transient
%K film<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=24AA60BFDBBD5618F6C687F4D7072CB2&yid=14E7EF987E4155E6&vid=F3583C8E78166B9E&iid=B31275AF3241DB2D&sid=FB36B1C076A263FA&eid=522844664D9E629A&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=6