%0 Journal Article
%T COMPUTATIONAL SCHEME FOR SIMULATING PLASMA DYNAM-ICS DURING PLASMA-IMMERSION ION IMPLANTATION
%A T E Sheridan Plasma Research Laboratory
%A Australian National University
%A Canberra
%A ACT
%A Australia
%A <br>T. E. Sheridan Plasma Research Laboratory
%A Australian National University
%A Canberra
%A ACT
%A Australia
%J 金属学报(英文版)
%D 2000
%I 
%X Plasma-immersion ion implantation (PIII) is a technique for implanting ions into conducting, semiconducting and insulating objects. In PIII, the object being treated is immersed in a plasma and pulsed to a large negative voltage (=-1 to-100 kV). The resulting sheath expands into the ambient plasma, extracting ions and accelerating them to the target. PIII has advantages over beam-line implantation in that large surfaces can be rapidly implanted, irregularly-shaped objects can be implanted without target manipulation, and surfaces that are not line-of-sight accessible can be treated. A two-dimensional, self-consistent model of plasma dynamics appropriate for PIII is described. The model is a hybrid, with Boltzmann electrons and kinetic ions, where the ion Vlasov equation is solved using the particle-in-cell (PIC) method. Solutions of the model give the time dependence of the ion flux, energy and impact angle at the target surface, together with the evolution of the sheath.
%K plasma-immersion ion implantation
%K plasma sheath
%K particle- in-cell simulation<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=91AAF8E981AB8F03080A1DC3D9D5A69D&yid=9806D0D4EAA9BED3&vid=FC0714F8D2EB605D&iid=0B39A22176CE99FB&sid=FED67FBA0A707330&eid=7FAAB0292FA0D5D0&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=20