%0 Journal Article
%T BINDING ENERGY OF SHALLOW DONOR IN In_xGa_(1-x)As/GaAsSTRAINED QUANTUM WELL
%A J H XingHL Huang
%A <br>J.
%A H.
%A Xing
%J 金属学报(英文版)
%D 1997
%I 
%X The effect of the dielectric mismatch between the well and the barrier materials on the binding energies of shallow donor has been investigated in Inx Ga1-xAs/GaAsstrained quantum well. The binding energies as a function of the well widths and impurity positions in the well and the barriers are obtained by using a variational method. Calculation results show that the effect of the dielectric mismatch is quite sizable and such effect is larger for off-center impurity positions,but the effect of the lattice mismatch is small in general.
%K quantum well
%K shallow donor binding energy<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=F07E56366096E46B1CE598D1A083896E&yid=5370399DC954B911&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=7E8E8B150580E4AB&eid=08805F9252973BA4&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=14