%0 Journal Article
%T SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3N_4 SUBSTRATE AND Ti-DEPOSITED FILM
%A XIAN Aiping SI Zhongyao Institute of Metal Research
%A Academia Sinica
%A ShenyangChina XIAN Aiping Institute of Metal ResearchAcademia Sinica
%A Shenyang China
%A <br>XIAN Aiping SI Zhongyao Institute of Metal Research
%A Academia Sinica
%A Shenyang.China XIAN Aiping Institute of Metal Research.Academia Sinica
%A Shenyang .China
%J 金属学报(英文版)
%D 1990
%I 
%X The chemical reaction at solid state between the pressless sintered Si_3N_4 substrate and Ti-de- posited film has been studied by X-ray diffraction analysis.The reaction all depends upon the temperature.It seems no reaction below 973 K:Ti_2N and Ti_5Si_3 form from 1073 to 1123 K: TiN and Ti_5Si_3 form at 1173 K,TiN and Ti_5Si_4 form at 1273 K;while the titanium film di- minishes completely.The lattice parameter of Si_3N_4 is unchanging thrioughout postannealing. This implies that the Ti atoms never dissolve into the Si_2N_4 lattice.
%K titanium
%K silicon nitride
%K interface
%K solid reaction<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=9FF3742B48D302C1FE402E49D8DF18E1&yid=8D39DA2CB9F38FD0&vid=38B194292C032A66&iid=9CF7A0430CBB2DFD&sid=334E2BB8B9A55ABB&eid=AA27B676BFCAA4BE&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=8