%0 Journal Article
%T INVESTIGATION ON DEPOSITIONS AND HARDNESS CHARACTERISTICS OF a SiC:H FILMS<br>INVESTIGATION ON DEPOSITIONS AND HARDNESS CHARACTERISTICS OF a-SiC:H FILMS
%A XFRong
%A ZYQin College of Mechanical Engineering
%A Taiyuan University of Technology
%A Taiyuan
%A China
%A <br>X.F.Rong and Z.Y.Qin College of Mechanical Engineering
%A Taiyuan University of Technology
%A Taiyuan
%A China
%J 金属学报(英文版)
%D 1999
%I 
%X In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.
%K a
%K SiC:H film
%K sputtering
%K hardness<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=8E182C8BE9B95A857165BB171C513939&yid=B914830F5B1D1078&vid=59906B3B2830C2C5&iid=94C357A881DFC066&sid=A67EE05E56DA7F45&eid=231F9A307C169827&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=5