%0 Journal Article
%T GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES
%A SLin
%A EQXie
%A QWen
%A ZWMa
%A CCNing
%A <br>S. Liu. E. Q. Xie
%A Q. Wen
%A Z. W. Ma and C. C. Ning
%J 金属学报(英文版)
%D 2002
%I 
%X Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswere used to characterize the films. The results show that the deposited films are(111)-oriented β-SiC films, and a C rich buffer layer formed between the substrateand SiC films when the substrate temperature is higher than 800℃. IR and XRDresults of an annealing process at 800℃ in H2 atmosphere, indicate that the crystallinequality is determined mainly by the substrate temperature during the film growth, andthe annealing process can improve the quality of Si/SiC interface. Higher substratetemperature leads to better quality of crystalline structttre and lower quality of SiC/Siinterfaces. Combined with an annealing process we obtained SiC films with very goodquality of both crystalline and SiC /Si interface.
%K SiC
%K sputtering
%K JR
%K XRD<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=F5389DB907374455E98F5BF17E6905AC&yid=C3ACC247184A22C1&vid=23CCDDCD68FFCC2F&iid=0B39A22176CE99FB&sid=AA27B676BFCAA4BE&eid=797D49279EA93BC4&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=7