%0 Journal Article
%T Calculation on Deposited Temperature During Pulsed Bias Arc Ion Plating
脉冲偏压电弧离子镀沉积温度的计算
%A BAI Xiao
%A LIN Guoqiang
%A DONG Chuang
%A WEN Lishi
%A
白晓
%A 林国强
%A 董 闯
%A 闻立时
%J 金属学报
%D 2004
%I
%X The influencing factors and their weights on deposited temperature have been studied in detail during pulsed bias arc ion plating (PBAIP). Based on the model of deposited temperature calculation in arc ion plating (AIP), and under the condition of the rectangle substrate voltage waveforms, the input power intensity of ion bombardment in PBAIP can be equal to the product of the input power in AIP and duty cycle in PBAIP. On the basis of energy conversation principle, a substrate temperature calculation model for PBAIP is established when the bias voltage varies from -1000 V to 0. Experiments are also used to verify the calculated results and a good agreement is obtained.
%K arc ion plating
%K pulsed bias
%K deposited temperature
%K calculation
电弧离子镀
%K 脉冲偏压
%K 沉积温度
%K 计算
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=4C321866DBF88A76&yid=D0E58B75BFD8E51C&vid=1371F55DA51B6E64&iid=F3090AE9B60B7ED1&sid=81A5772701933E75&eid=F79A45851FD04E0C&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=16