%0 Journal Article
%T THE INTERACTION BETWEEN STACKING FAULT AND HYDROGEN IN SINGLE CRYSTAL SILICON<br>硅单晶中层错与氢的交互作用
%A JIANG Bailin
%A ZHI Rentao
%A CHU Wuyang
%A <br>蒋柏林
%A 职任涛
%A 褚武扬
%J 金属学报
%D 1997
%I 
%X Hydrogen on the surface of single crystal silicon has been introduced bycathodic charing. The interaction between stacking fault and hydrogen on the surface of thesample has been researched by means of chemical etching. Atomic hydrogen will segregate atoutcrops of the stacking fault and particularly Frank dislocation on the surface of single crystal silicon and compound into molecule hydrogen at the outcrops. The distortion zone induced by hydrogen pressure, which can be detected as etching pit after etching, is preferablylocated at the outcrops of Frank dislocation.
%K single crystal silicon
%K hydrogen
%K stacking fault
%K lattice distortion<br>硅单晶
%K 氢
%K 层错
%K 晶格畸变
%K 热处理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=17FA1B77429011616D65C00065D0FBE0&yid=5370399DC954B911&vid=27746BCEEE58E9DC&iid=B31275AF3241DB2D&sid=03EE8EDD44A3D4BE&eid=39E48869A719B9DE&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=1