%0 Journal Article
%T SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM<br>GaAs在Bi中的溶解特性及相平衡
%A FENG Shuifu
%A ZHOU Jicheng
%A <br>冯水富
%A 周继程
%J 金属学报
%D 1990
%I 
%X A modified liquid phase epitaxy apparatus for semiconductor materialswas used to measure the solubility of GaAs in Bi. The solubility of GaAs in Biand two phase diagrams rich in Bi under H_2 and N_2 atmosphere were obtained. Anew phenomenon, in which the parameters Q value (quantity of GaAs dissolved inBi in fixed time but various temperatures/saturated quantity of GaAs in Bi) weredifferent from each other and there existed a maximum Q value in particular tem-perature, was observed. This phenomenon can be recognized as a common feature ofa simple binary metallic system which has the phase diagram similar to that of Bi-GaAs. The difference observed from the dependence of Q values on temperature inboth H_2 and N_2 atmosphere was discussed.
%K liquid phase epitaxy
%K solubility
%K phase diagram<br>GaAs
%K Bi
%K 溶解度
%K 相平衡
%K 半导体材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=454839BDD7597BA1C79E81E3CF35A476&yid=8D39DA2CB9F38FD0&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=331211A5F5616413&eid=03F1579EF92A5A32&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=1