%0 Journal Article
%T AN INVESTIGATION ON THE VAPOUR PHASE EPITAXY OF DOPED GaAs<br>
%A Peng Ruiwu
%A Sun Shangzhu
%A Shen Songhua Shanghai Institute of Metallurgy
%A Academia Sinica
%A <br>
%J 金属学报
%D 1980
%I 
%X Epitaxial layers of doped GaAs have been prepared from a Ga/AsCl_3/H_2 systemin an improved epitaxial apparatus and the vapour-phase doping process of the GaAshas been investigated. The quality of these layers thus obtained was found to besatisfactory and they are used in making microwave devices such as variators andswitches. Discussions on a variety of factors including surface morphology, growthrate, electronic mobility, breakdown voltage, doping uniformity across a wafer,doping profile, defects and reproducibility of the epitaxy were made.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=BBFDAEF52817FEDA9C91E97FAD72201B&yid=E56875464B1C0EC1&vid=7801E6FC5AE9020C&iid=38B194292C032A66&sid=51C74DF6A16DA45B&eid=F4BDB5452F9F5642&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=26