%0 Journal Article
%T SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES<br>TiN薄膜的合成及其性能研究
%A ZHOU Jiankun
%A LIU Xianghuai
%A CHEN Youshan
%A WANG Xi
%A ZHENG Zhihong
%A HUANG Wei
%A ZOU Shichang Shanghai Institute of Metallurgy Academia Sinica Ion Beam Laboratory
%A Shanghai Institute of Metallurgy
%A Academia Sinica
%A Shanghai
%A <br>周建坤
%A 柳襄怀
%A 陈酉善
%A 王曦
%A 郑志宏
%A 黄巍
%A 邹世昌
%J 金属学报
%D 1990
%I 
%X The TiN film was synthesized by alternate deposition of Ti and nitro-gen ion bombardment under 40 keV at room temperature. The component depthprofiles and the structure of the film have been investigated by means of RBS,AES, TEM, XPS and X-ray diffraction. The results showed that the TiN films syn-thesized by ion beam enhanced deposition (IBED) are mainly composed of TiNcrystallites, sized about 30-40 nm, with random orientation. The oxygen contaminationin TiN film prepared by IBED is less than that of the deposited film without nitrogenion bombardment. It was confirmed that there is a significant intermixed layer, about40nm thick, at the interfaces. The films formed by IBED exhibit superior hardnessand improvement over the wear resistance and frictiton properties.
%K TiN film
%K ion beam enhanced deposition<br>TiN膜
%K 薄膜
%K 合成
%K 离子束
%K 沉积
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=7E9EF86334BA7449EFAD5723C7527F05&yid=8D39DA2CB9F38FD0&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=58F693790F887B3B&eid=A8DE7703CC9E390F&journal_id=0412-1961&journal_name=金属学报&referenced_num=1&reference_num=1