%0 Journal Article
%T THE COMPUTER SIMULATION OF ION SPUTTER PROFILING PROCESS<br>
%A QU Zhe
%A XIE Tiansheng
%A <br>
%J 金属学报
%D 1986
%I 
%X Based on the common used assumptions and differential sputtering model, the equations describing sputtering process have been derived. Both concentration and depth can be calculated simultaneously. It is suitable not only for the homogeneous binary systems but also for the multicomponent systems which are not necessary to be a homogeneous one. Some possible original concentration distribution systems have been treated with those equations and showed they are workable.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=FDD3101511CC40C12F536FCBE22EE927&yid=4E65715CCF57055A&vid=BC12EA701C895178&iid=94C357A881DFC066&sid=1F199509C0B6C4D6&eid=76B5E24D6EC46B4B&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=1