%0 Journal Article
%T Study of Passive Mode Locking of a Diode-pumped Nd: GdYVO4 Laser with a LT-GaAs<br>低温GaAs被动调Q锁模Nd:GdYVO4激光器的实验研究
%A DAI Wei
%A LI De-chuan
%A WANG Ming-jian
%A ZHANG Shuai-yi
%A YU Guo-lei
%A LI Jian
%A <br>戴巍
%A 李德川
%A 王明建
%A 张帅一
%A 于国蕾
%A 李健
%J 红外
%D 2008
%I 
%X By using a piece of GaAs crystal grown at low temperature as a passively saturated absorber as well as a output coupler,a passively Q-switched mode-locking Nd;GdYVO_4 laser is demonstrated. The fundamental frequency and Q-switched output properties of the Nd:GdYVO_4 laser are studied. The experimental results show that when a planar mirror is used as the output mirror and the incident pumping power is 10W,the output power of 3.5W and the optical-optical conversion efficiency of 35% can be obtained;when GaAs is used as the output mirror,the threshold power for Q-switching mode-locked is 1.2W;and when the incident pumping power is 10W,the output power of 1.88W and the mode-locked pulse train with a repetition rate of 114MHz can be obtained.At the incident pumping power of 7W,the modulation depth of the Q-switchlng mode-locking pulse is up to 100%;at the incident pumping power of 8W,the output power of 1.58W,the Q-switched envelope pulse train with a repetition rate of 91kHz and the full width at half maximum(FWHM)of 43.2nm can be obtained.
%K Nd:GdYV04<br>激光器
%K 低温GaAs晶体
%K 调Q锁模
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=BE136DB9B1F1B886A2B749C4726F4DED&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=F3090AE9B60B7ED1&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=8