%0 Journal Article
%T Nonuniformity Correction Technology for MOS Resistor Array Based on Neural Network<br>基于神经网络的MOS电阻阵列非均匀性校正
%A Liu Fan
%A Xiao Shuchen
%A Chen xiujian
%A Chencui
%A <br>刘凡
%A 肖树臣
%A 陈秀健
%A 陈萃
%J 红外
%D 2011
%I 
%X The causes resulting in the nonuniformity in a MOS resistor array are analyzed and a new nonuniformity correction method which can obviously improve the quality of the generated infrared scene is proposed. When the MOS resistor array is tested offline, the voltage vs temperature data and the voltage vs temperature data to be corrected are measured. Then, by taking these raw data as the input of a neural network, the functional relationship between the pre-correction input and the expected input of each element in the resistor array is established. Finally, a look-up compensation table which can be used to reduce the nonuniformity due to the different responsibility of each element in the MOS resistor array is generated. The simulation result shows that this method is feasible and its correction effectiveness is greatly improved in comparison with the conventional piecewise linearization method.
%K MOS resistor array
%K neural network
%K nonuniformity correction<br>MOS电阻阵列
%K 神经网络
%K 非均匀性校正
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=2B168B6160CED65F005E942EE93F8F3A&yid=9377ED8094509821&vid=9971A5E270697F23&iid=9CF7A0430CBB2DFD&sid=F3090AE9B60B7ED1&eid=F3583C8E78166B9E&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=5