%0 Journal Article
%T Current Status of Research on Defects in HgCdTe Epilayers<br>HgCdTe薄膜材料缺陷的研究现状
%A CAO Xiu-liang
%A <br>曹秀亮
%J 红外
%D 2006
%I 
%X The defects in HgCdTe epilayers are the critical factors to limit the development of high performance infrared focal plane devices.The measurement and assessment of the defects in HgCdTe epilayers are essential in material growing and device fabrication.In this paper,the advances in the research on several main defects in HgCdTe epilayers are presented in detail.
%K HgCdTe
%K epilayers
%K defects
%K device<br>HgCdTe
%K 外延
%K 缺陷
%K 器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=C403649138773A14&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=5D311CA918CA9A03&sid=DB817633AA4F79B9&eid=9971A5E270697F23&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=14