%0 Journal Article
%T Simulation and Design of New Nano-scale MOSFETs<br>新型纳米尺寸MOSFET器件的模拟和设计
%A HU Wei-d
%A CHEN Xiao-shuang
%A QUAN Zhi-jue
%A <br>胡伟达
%A 陈效双
%A 全知觉
%J 红外
%D 2007
%I 
%X During the design and fabrication of semiconductor devices, if the numerical simulation is used to optimize the performance parameters of the designed devices, the test period and fabrication cost of the devices will be reduced remarkably. In this paper, the models and methodologies for simulating new nano-scale MOSFETs are described in brief. The current status of the research on the simulation of next generation MOSFETs at home and abroad is presented in detail and its trend is given.
%K device simulation
%K numerical methodology
%K MOSFET
%K FinFET
%K short channel effects<br>器件模拟
%K 数值方法
%K MOSFET
%K FinFET
%K 短沟道效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=B33DE72B197490BC967B4BC926B5CD59&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=0B39A22176CE99FB&sid=DF92D298D3FF1E6E&eid=708DD6B15D2464E8&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=22