%0 Journal Article
%T Properties of Films by PECVD Deposition<br>氢化非晶硅薄膜的性能研究
%A YE Lin
%A LIU Wei-guo
%A <br>叶林
%A 刘卫国
%J 红外
%D 2006
%I 
%X The properties of the films by PECVD deposition have been studied. The thickness of the film was measured by a spectroscopic ellipsometer. The film stress was analyzed by a stress distribution test instrument. The resistivity, square resistence, TCR and the relation among them were investigated by a four-probe instrument. It has been found that the film by PECVD deposition is symmetrical and its depositon rate is up to 31.89nm/min. The film has low stress and high TCR. Through data analysis, it is concluded that the relation between the resistivity and TCR of the film is nearly linear in a given resistivity range.
%K PECVD
%K TCR<br>PECVD
%K α-Si
%K H
%K 工艺参数
%K 应力
%K TCR
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=FFC3A64C25715FBF&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=B31275AF3241DB2D&sid=C5154311167311FE&eid=D3E34374A0D77D7F&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=13