%0 Journal Article
%T Shape Transition Mechanism of Self-aligned InAs Nanostructures on GaAs(331)A Substrates<br>GaAs（331）A衬底上分子束外延生长自组织InAs纳米结构形貌演化机制
%A MIAO Zhenhua GONG Zheng FANG Zhidan NI Haiqiao NIOU Zhichuan
%A <br>苗振华
%A 龚政
%A 方志丹
%A 倪海侨
%A 牛智川
%J 红外
%D 2004
%I 
%X Self-aligned InAs quantum wires (QWRs) or three-dimensional (3-D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approach and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures prefer to the formation of wire like nanostructures while high substrate temperatures favor for 3-D islands. The shape transition is attributed to the tradeoff between surface energy and strain energy.
%K molecular beam epitaxy
%K surface morphology
%K AFM<br>分子束外延
%K 砷化镓
%K 砷化铟
%K 纳米结构
%K 原子力显微镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=E9FCCB42856B499B&yid=D0E58B75BFD8E51C&iid=9CF7A0430CBB2DFD&sid=CA4FD0336C81A37A&eid=94C357A881DFC066&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=17