%0 Journal Article
%T Advances in Study of Arsenic Doped HgCdTe<br>掺砷碲镉汞的研究进展
%A National Laboratory for Infrared Physics and
%A <br>张小华
%A 褚君浩
%J 红外
%D 2012
%I 
%X Arsenic doped HgCdTe is the key material in the development of infrared devices including high performance infrared detectors, infrared focal plane arrays and p-on-n heterojunctions. In this work, references about arsenic doped HgCdTe are summarized. The activation of As is related to the annealing condition and the dopant concentrations. For doping concentrations in the 1016-1018cm-3 range, a two-step annealing produces activation of As of the frontside HgCdTe. The VHg concentration is high relative to the backside HgCdTe .There exist AsTe and AsHg in the space region close to the substrate.
%K arsenic
%K mercury cadmium telluride
%K dopant concentration
%K activation
%K defect<br>砷
%K 碲镉汞
%K 掺杂浓度
%K 激活
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=649CF1A01F52D5711FA824AFD84ED79C&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=E158A972A605785F&sid=CA4FD0336C81A37A&eid=B31275AF3241DB2D&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=51