%0 Journal Article
%T Picosecond pump-probe study of carrier relaxation in deep levels of HgCdTe<br>碲镉汞深能级载流子弛豫时间的皮秒泵浦-探测研究
%A MA Fa-Jun
%A LI Zhi-Feng
%A CHEN Lu
%A LU Wei
%A <br>马法君
%A 李志锋
%A 陈路
%A 陆卫
%J 红外与毫米波学报
%D 2011
%I Science Press
%X The non-equilibrium carrier dynamics in HgCdTe has been studied with picosecond pump-probe measurements. The delay-time dependent differential transmission shows a negative minimum after the absorption saturation maximum, which can be attributed to an additional absorption process because of the deep levels. A rate equation formalism has been employed to model the carrier dynamics. The experimental differential transmission spectra has been fitted very well with the calculations when two deep level relaxation time constants are introduced, implying two types of the deep levels. The variation of the relaxation time with the pump intensity has also been studied.
%K HgCdTe
%K deep levels
%K relaxation time
%K pump-probe measurement<br>碲镉汞，深能级，驰豫时间，泵浦－探测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=5A63F5AD7FC6A67970A0FAF2218F1326&yid=9377ED8094509821&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=9296A146D1D94BC4&eid=60E9AACF61B3107F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=7