%0 Journal Article
%T Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE<br>InP衬底上晶格匹配四元系InAlGaAs的气态源分子束外延生长
%A WANG Kai
%A GU Yi
%A FANG Xiang
%A ZHOU Li
%A LI Cheng
%A LI Hao-Si-Bai-Yin
%A ZHANG Yong-Gang
%A <br>王凯
%A 顾溢
%A 方祥
%A 周立
%A 李成
%A 李好斯白音
%A 张永刚
%J 红外与毫米波学报
%D 2012
%I Science Press
%X Properties of quaternary InAlGaAs alloys prepared by gas source MBE growth have been investigated with high resolution X-ray diffraction rocking curves, photoluminescence and Hall measurements. X-ray rocking curves show that all the samples are well matched to InP substrate according to calibration data. The photoluminescence and Hall measurement show that the PL intensity, electron concentration and mobility decrease distinctly as Al composition increases. The group III compositions are determined from both photoluminescence and x-ray diffraction measurements, and agreed well with the designed values. The relationship between the designed Al compositions and measured values provides us a practical way for the precise composition control.
%K InAlGaAs
%K gas source molecular beam epitaxy
%K X-ray diffraction
%K photoluminescence<br>化合物半导体
%K 分子束外延
%K InAlGaAs
%K X射线衍射
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=91737FB816EFCE87E9C76162111E21D3&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=44FDB9366EDDFA2B&eid=3BAAE0DA6093AC05&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=13