%0 Journal Article
%T Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination<br>基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器
%A ZHU Yao-Ming
%A LI Yong-Fu
%A LI Xue
%A TANG Heng-Jing
%A SHAO Xiu-Mei
%A CHEN Yu
%A DENG Hong-Hai
%A WEI Peng
%A ZHANG Yong-Gang
%A GONG Hai-Mei
%A <br>朱耀明
%A 李永富
%A 李雪
%A 唐恒敬
%A 邵秀梅
%A 陈郁
%A 邓洪海
%A 魏鹏
%A 张永刚
%A 龚海梅
%J 红外与毫米波学报
%D 2012
%I Science Press
%X Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%. Otherwise, the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.
%K ICP etching
%K N-on-P configuration
%K linear detector array
%K photoelectric characteristics<br>ICP刻蚀
%K N-on-P结构
%K 线列探测器
%K 光电性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=4CE9B0A94D67A740B264D344CD6EBEFD&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=CA4FD0336C81A37A&sid=708DD6B15D2464E8&eid=F3583C8E78166B9E&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=9