%0 Journal Article
%T Growth control of Ge/Si quantum dots<br>Ge/Si量子点的控制生长
%A PAN Hong-Xing
%A WANG Chong
%A YANG Jie
%A ZHANG Xue-Gui
%A JIN Ying-Xia
%A YANG Yu
%A <br>潘红星
%A 王茺
%A 杨杰
%A 张学贵
%A 靳映霞
%A 杨宇
%J 红外与毫米波学报
%D 2012
%I Science Press
%X A series of Ge quantum dot samples were grown by ion beam sputtering on Si (100) substrates with a Si buffer layer. The evolution of the topography and dimension of Ge/Si quantum dot were characterized using AFM and Raman spectra. The results show that the density of the quantum dots increased to a maximum and then decreased with the thickness of Si buffer layers, the maximum is up to 1.9×1010 cm-2 due to the influence of the thickness and growth patterns of Si buffer layers. Growth interruption is beneficial to improve the crystallization of Si buffer layer and the density of the quantum dot. The effects of Si buffer layers which manipulate the growth and shape of the Ge quantum dots are discussed in details. In addition, a growth model of the quantum dots is proposed.
%K Si buffer layer
%K Ge quantum dots
%K ion beam sputtering<br>硅缓冲层
%K 锗量子点
%K 离子束溅射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=B2D56FC40CE075F1A915A9362EA4D34B&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=1FF3CD54EFC256A1&eid=5335AD3CFE6E14EA&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=14