%0 Journal Article
%T QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-<br>QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs／AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR—Ⅱ ELECTRICAL ASPECTS
%A Fu Y
%A <br>FuY
%A LINing
%J 红外与毫米波学报
%D 2002
%I Science Press
%X A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.
%K quantum well infrared photodetector(QWIP)
%K inter
%K diffusion
%K carrier mobility
%K alloy scattering
%K wavefunction boundary condition<br>量子机械模型
%K 仿真
%K 相互扩散
%K 电子学
%K 量子阱红外成像
%K 电子迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=ADFDE17CE66FD051&yid=C3ACC247184A22C1&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=238BD7580EFCC5AE&eid=8CCD0401CC9AE432&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=3&reference_num=36