%0 Journal Article
%T Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films<br>甲烷流量对8.5代非晶硅光伏组件P层材料结构和光学性质的影响
%A Dou Ya-nan
%A He Yue
%A Ma Xiao-guang
%A Qiao Qi
%A Chen Xiao-jing
%A Wang Yong-qian
%A Chen Robin
%A Chu Jun-hao
%A <br>窦亚楠
%A 何悦
%A 马晓光
%A 乔琦
%A 陈肖静
%A 王永谦
%A 陈绍斌
%A 褚君浩
%J 红外与毫米波学报
%D 2012
%I Science Press
%X The effect of CH4 flow rate on the structural and optical properties of boron-doped amorphous silicon carbon films as window p-layer in the industrial hydrogenated amorphous silicon solar module was investigated. The p-layer amorphous hydrogenated silicon carbon films were deposited from SiH4-CH4 gas mixtures in the Applied Materials SUNFAB radio frequency-plasma enhanced chemical vapor deposition Gen8.5 system with dimensions of 2.2 m 2.6 m. Infrared and transmittance/reflectance spectra were employed to analyze the bond configurations and optical properties of the films associating with structures of the p-layer films which are sensitive to the deposition condition. The optical band gap of the p-layer films increased as the CH4 flow rate ranged from 3000 sccm to 8850 sccm with other deposition conditions unchanged. With increasing CH4 flow rate, the deposition rate of p-layer amorphous silicon carbon films decreased slowly, because of the reduction of SiH3 radical in the SiH4-CH4 plasmas. The uniformity of the hydrogenated amorphous silicon carbon films was also investigated, by sampling and analyzing the deposition rate on four different locations of the large area films.
%K a-SiC:H
%K infrared spectrum
%K uniformity
%K CH4 flow rate<br>非晶碳化硅
%K 红外光谱
%K 均匀性
%K 甲烷流量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=4CE9B0A94D67A740F13641646C594520&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=CA4FD0336C81A37A&sid=94C357A881DFC066&eid=F3090AE9B60B7ED1&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=22