%0 Journal Article
%T STRAIN AND RELAXATION OF MBE-HgCdTe FILMS<br>HgCdTe分子束外延薄膜的应变弛豫
%A FANG Wei-Zheng
%A WANG Yuan-Zhang
%A WU Yan
%A LIU Cong-Feng WEI Yan-Feng
%A WANG Qing-Xue
%A YANG Jian-Rong
%A HE Li
%A <br>方维政
%A 王元樟
%A 巫艳
%A 刘从峰
%A 魏彦锋
%A 王庆学
%A 杨建荣
%A 何力
%J 红外与毫米波学报
%D 2004
%I Science Press
%X The tilt relation and lattice misfit phenomenon between MBE-HgCdTe layers and different substrates were studied by employing reciprocal lattice mappings technology. The precise fit zinc composition in Cd 1-yZn yTe substrates was determined by analyzing the elastic deformation in MBE-HgCdTe layers. The result shows that MBE-HgCdTe epitaxial layers and substrates are tilted with respect to each other, and the tilt angle increases with the lattice mismatch. In the case of little mismatch between substrate and layer, the layer is strained with partially relaxation of stress. While the layer is full relaxed, the lattice mismatch becomes large. In this case, the HgCdTe layers have more misfit dislocations and larger width of half maximum.
%K HgCdTe
%K Cd
%K 1-yZn
%K yTe substrate
%K reciprocal lattice mapping
%K misfit dislocation
%K FWHM<br>外延层
%K 衬底
%K 晶格失配
%K 分子束外延
%K 晶格匹配
%K 外延生长
%K 二维
%K 弛豫
%K 配位
%K CdTe薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=254FF72D788A5C9F&yid=D0E58B75BFD8E51C&vid=EA389574707BDED3&iid=94C357A881DFC066&sid=86C0C9A759FDA8CA&eid=45417CEE361AD77F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=2&reference_num=8