%0 Journal Article
%T THEORETICAL CALCULATION OF DOPING OPTIMIZATION FOR p-on-n HgCdTe PHOTODIODE<br>碲镉汞p—on—n光伏器件优化掺杂的理论计算
%A LI Xiang-Yang
%A FANG Jia-Xiong
%A <br>李向阳
%A 方家熊
%J 红外与毫米波学报
%D 2002
%I Science Press
%X By considering the main current mechanism in the long-wavelength HgCdTe photodiode, theoretical calculation of R 0A was done by choosing proper parameters. Calculations show that, given n side substrate concentration, the p side doping concentration should not be too large on considering the limitation of the tunneling current,and vice versa. The relation of optimal concentration with the substrate concentration was calculated and the corresponding R 0A was also obtained.
%K HgCdTe photodiode
%K p-on-n type
%K optimization<br>碲镉汞光电二极管
%K p－on－n型
%K 优化设计
%K 理论计算
%K 电流机制
%K 光伏器件
%K 长波红外探测器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=54525C97C01A8112&yid=C3ACC247184A22C1&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=4F2F18DD6F870C2C&eid=B9704B40A4225A24&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=4