%0 Journal Article
%T PARAMETERS EXTRACTION FROM THE DARK CURRENT CHARACTERISTICS OF LONG-WAVELENGTH HgCdTe PHOTODIODE<br>光伏型碲镉汞长波探测器暗电流特性的参数提取研究
%A QUAN Zhi-Jue
%A LI Zhi-Feng
%A HU Wei-D
%A YE Zheng-Hu
%A LU Wei
%A <br>全知觉
%A 李志锋
%A 胡伟达
%A 叶振华
%A 陆卫
%J 红外与毫米波学报
%D 2007
%I Science Press
%X An data-processing method was developed to obtain the device parameters from the resistance-voltage(R-V) characteristics measured in long-wavelength HgCdTe photodiode.This curve-fitting model includes the diffusion,generation-recombination,trap-assisted tunneling,and band-to-band tunneling current as dark current mechanisms.The fitting procedure was presented in details and the extents of the fitting errors were discussed.By fitting the R-V characteristics of a real device,the applicability of our method has been proved for obtaining the basic parameters of devices.
%K HgCdTe(MCT)
%K photodiode
%K dark current
%K parameter extraction<br>碲镉汞(MCT)
%K 光伏探测器
%K 暗电流
%K 参数提取
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=111D58F27B4D52DA6327517CD92D64C6&yid=A732AF04DDA03BB3&vid=96C778EE049EE47D&iid=0B39A22176CE99FB&sid=08805F9252973BA4&eid=6700D0D256586E73&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=2&reference_num=11