%0 Journal Article
%T FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS<br>Au／CdTe＋ZnS／HgCdTe双层介质膜MIS器件的制备及研究
%A ZHOU Yong Dong
%A FANG Jia Xiong LI Yan Jin GONG Hai Mei WU Xiao Shan JIN Xiu Fang TANG Ding Yuan
%A <br>周咏东
%A 方家熊
%J 红外与毫米波学报
%D 2001
%I Science Press
%X The HgCdTe MIS device of CdTe and ZnS double insulator layers was successfully fabricated by using the techniques of the Ar + beam sputtering deposition of CdTe and ZnS films and the HgCdTe device manufacture. The MIS device C V measurement was used to give the electric character of the CdTe/HgCdTe interface. It is proved that the CdTe+ZnS double layer passivant can satisfy the surface passivation of HgCdTe infrared focal plane array.
%K CdTe film
%K HgCdTe infrared focal plane array
%K device surface passivation
%K ZnS<br>薄膜
%K HgCdTe
%K 红外焦平面
%K 器表面纯化
%K MIS器件
%K 碲化镉
%K 硫化锌
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=E3363531CE8C66E1B0A457B322D215DE&yid=14E7EF987E4155E6&vid=A04140E723CB732E&iid=E158A972A605785F&sid=D537C66B6404FE57&eid=10828928EB89AD8E&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=12