%0 Journal Article
%T QUANTITATIVE MOBILITY SPECTRUM ANALYSIS OF n-HgCdTe ACCUMULATED LAYERS<br>n—HgCdTe表面积累层的定量迁移率谱研究
%A GUI Yong-sheng
%A ZHENG Guo-zhen
%A CAI Yi
%A CHU Jun-Hao
%A <br>桂永胜
%A 蔡毅
%J 红外与毫米波学报
%D 1998
%I Science Press
%X 利用定量迁移率谱技术，通过对霍尔系数和电阻率与磁场强度的关系，获得了ｎ－ＨｇＣｄＴｅ光导器件表面积累层中子带电子的浓度和迁移率，结果与Ｓｈｕｂｎｉｋｏｖ－ｄｅＨａｓｓ实验和理论计算的结果非常吻合．
%K quantitative mobility spectrum analysis
%K accumulated layer
%K HgCdTe<br>定量迁移率谱分析，表面积累层，HgCdTe
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=6F90716EFC50C817&yid=8CAA3A429E3EA654&vid=BCA2697F357F2001&iid=38B194292C032A66&sid=B1F98368A47B8888&eid=50BBDFAC8381694B&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=15