%0 Journal Article
%T TEMPERATURE DEPENDENCE OF OPTICAL GAIN IN InGaAs QUANTUM DOTS LASER<br>InGaAs量子点激光器光增益的温度特性
%A NING Yong Qiang
%A LIU Yun
%A WANG Li Jun
%A GAO Xin
%A <br>宁永强
%A 高欣
%J 红外与毫米波学报
%D 2002
%I Science Press
%X The temperature dependence of gain in InGaAs multi stacked quantum dots (QDs) laser was investigated and compared with InGaAs single quantum well(SQW) laser. It was found that quantum dost laser showed a much better stability of gain on temperature. The gain in InGaAs QDs increases with temperature in the region from 140K to 200K. Beyond 200K the gain decreases with increasing temperature. The mechanism for the above gain characteristics was analyzed. The gain peak wavelength moves to longer wavelength range with increasing temperature and exhitits a better temperature stability compared with quantum well laser.
%K quantum dots
%K optical gain
%K temperature dependence<br>InGaAs
%K 激光器
%K 量子点
%K 光增益
%K 温度特性
%K 半导体材料
%K 砷镓铟化合物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=E6254441242035E7&yid=C3ACC247184A22C1&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=B8F8200D88DDC7D6&eid=334C61CAF4C8EF4E&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=5