%0 Journal Article
%T STUDY ON SUBSTRATE-LIFTED-OFF QUANTUM WELL INFRARED PHOTODETECTOR<br>衬底剥离的量子阱红外探测器研究
%A ZHEN Hong-Lou
%A LI Ning
%A JIANG Jun
%A XU Wen-Lan
%A LU Wei
%A HUANG Qi
%A ZHOU Jun-Ming
%A <br>甄红楼
%A 李宁
%A 江俊
%A 徐文兰
%A 陆卫
%A 黄绮
%A 周均铭
%J 红外与毫米波学报
%D 2006
%I Science Press
%X Epitaxial films of GaAs/AlGaAs multi-quantum wells were lifted-off from its grown substrate and transferred to a Si substrate,a typical infrared optical window material.The lifted-off sample was fabricated into quantum well infrared photodetector(QWIP).The responsivity and photocurrent spectrum of the lifted-off QWIP is shown in similar to that of QWIP processed from the as-grown wafer.It demonstrates that the lift-off process can be used in QWIP process without device performance degradation.The lifted-off process can provide a new possibility to integrate the QWIP devices with other optical device to enhance the detector performance.
%K substrate lift-off
%K quantum well infrared detector
%K photocurrent spectra
%K dielectric function<br>衬底剥离
%K 量子阱红外探测器
%K 光电流谱
%K 介电函数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=BF70A802FF2F3C74&yid=37904DC365DD7266&vid=C5154311167311FE&iid=38B194292C032A66&sid=8575BEDA702C4B7C&eid=F260CE035846B3B8&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=12